CVD Diamond Submount(Heat SInk)
--U.S. military data shows that 55% of the effectiveness of electronic devices is due to heat dissipation problems.
--As optoelectronics, radio frequency electronics, power chips and other devices develop towards high power and small size, thermal management issues become more difficult.
--As the best thermal conductive material in nature, diamond heat dissipation substrate will effectively reduce chip junction temperature and show great value in chip packaging and other fields.
Basic parameters of diamond heat dissipation materials
Parameter Single crystal polycrystalline
Thermal conductivity (W/mK) 2200 >1200
Thermal expansion coefficient (@300K, ppm/K) 1 1
Hardness (Gpa) 70-120 81
Fracture toughness (Mpa m0.5) 5.3-7 5.3-7
Young's modulus (Gpa) 1050 1050
Density (1000Kg/m3) 3.52 3.52
Dielectric constant (@35GHz) 5.68 5.68
Tangent loss (@145GHz 10^-6) -- <100
Surface roughness <2nm Ra<20nm
Flatness <1micron/mm --
Typical size 7*7mm 2 inches (φ=50mm)
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※ Our company provides a variety of single crystal, polycrystalline and surface metallized diamond products for heat dissipation, and can provide surface metal film patterning services.
Metallized single crystal diamond
Thermal management
Thermal conductivity: 2200W/mK
Size: 7*7mm-15*15mm
Thickness: 0.05mm-3mm
Surface roughness: Ra<5nm
Polycrystalline diamond
Thermal management
Thermal conductivity>1200W/mK
Dimensions: 2 inches
Thickness: 0.1mm-1mm
Surface roughness: Ra<20nm
Single crystal diamond
Thermal conductivity: 2200W/mK
Size: 7*7mm-15*15mm
Thickness: 0.05mm-3mm
Surface roughness: Ra<5nm
More Application:
Optical Window
A.diamond material X-ray windows
B.diamond material High Power laser optical window,such as CO2 Laser ,disk laser
C.diamond material high power laser multispectral optical window
D. diamond material High-power millimeter-wave windows
Thermal Management
A.diamond material heat sink/submount
Semiconductor
A.diamond wafer
B.GaN on diamond