CVD DIAMOND WAFER


Description

Single crystal and polycrystalline diamond

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High-quality diamond grown by the MPCVD method, supplemented by an efficient and precise processing method of original plasma polishing, achieves a surface roughness of wafer-level diamond growth surface Ra<1nm (5*5um), or even lower than 0.5nm, reaching an internationally leading level level

A.

Size: 10*10mm, 5*5mm, etc.

Thickness: 0.2-1mm, etc., can be customized

B.
Thermal conductivity:1000-2200W/(m·K)

C.

Surface roughness Ra<1nm (5*5um),

Back Ra<20nm, can be customized

D.

Wafer warpage <300um, can be customized



TyepSingle Crystal DiamondPolycrystalline diamond
Thermal conductivity>2000W/(m·k)1000-2200 W/(m·k)
Surface roughnessRa<1nmRa<1nm
TTV
/<30um(2inch)
Warpage/<300um (2inch),customizable
Flatness PV/<15fringe(020mm)

*The above are standard product specifications, and customized services can be provided according to customer requirements.



Testing Data--Surface Roughness

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FIG1:Ra=0.278nm

Testing Data--Thermal conductivity

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FIG2:Thermal conductivity detection: 2190.9W/(m·k)


Testing Data--Wafer Warpage

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FIG3:Warp:43.856um


More Application:

Optical Window

A.diamond material X-ray windows

B.diamond material High Power laser optical window,such as CO2 Laser ,disk laser

C.diamond material high power laser multispectral optical window

D. diamond material High-power millimeter-wave windows

Thermal Management

A.diamond material heat sink/submount

Semiconductor

A.diamond wafer 

B.GaN on diamond